Hard boron oxide thin‐film deposition using electron cyclotron resonance microwave plasmas

Autor:	S. M. Gorbatkin, Warren C. Oliver, R. L. Rhoades, Ting Y. Tsui
Rok vydání:	1994
Předmět:	Materials science Physics and Astronomy (miscellaneous) Analytical chemistry chemistry.chemical_element Chemical vapor deposition Substrate (electronics) Electron cyclotron resonance Surface coating chemistry.chemical_compound chemistry Boron oxide Boron suboxide Thin film Boron
Zdroj:	Applied Physics Letters. 65:2672-2674
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.112598
Popis:	Hard boron suboxide thin films were deposited in an electron cyclotron resonance (ECR) microwave plasma system at substrate temperatures below 300 °C. A high‐temperature effusion cell, operated at 2200°–2250 °C, was used for injection of boron downstream of an Ar/O2 ECR plasma. B ion bombardment is estimated to have been up to 6% of the total boron flux, and Ar ion bombardment is estimated to have contributed ∼100 eV/deposited atom. Boron suboxide films with oxygen concentrations of 11% exhibited hardnesses up to 30 GPa, equal to sapphire and near that of pure boron. The hardness/modulus ratio was 0.1, significantly better than that of sapphire (0.067) or solid boron (0.074), indicating these films may be of interest for a variety of tribological applications.
Databáze:	OpenAIRE
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