Epitaxial Insulating Fluoride Layers on Semiconductors
| Autor: | R.H. Williams, L. C. Jenkins, A. Hughes, C. L. Griffiths |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Chemistry
Analytical chemistry Substrate (electronics) Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Overlayer Inorganic Chemistry X-ray photoelectron spectroscopy Vacuum deposition Monolayer Materials Chemistry Ceramics and Composites Orthorhombic crystal system Physical and Theoretical Chemistry Thin film |
| Zdroj: | Journal of Solid State Chemistry. 106:150-155 |
| ISSN: | 0022-4596 |
| Popis: | The epitaxial growth of the rare earth fluorides HoF 3 and GdF 3 on Ge, Si, and GaAs has been investigated. At the same time the detailed nature of the interfaces formed has been probed by X-ray photoelectron spectroscopy. Epitaxial layers can readily be grown and it is shown that layers with the high temperature tysonite-like phase may be prepared in such a way as to be stable at room temperature. A critical thickness exists where the layer structure changes to a multidomain orthorhombic form; this is dependent on the degree of mismatch of the lattices of overlayer and substrate. Whereas the GdF 3 -Ge interface is unreactive, strong reactions are seen for HoF 3 -Si, GdF 3 -GaAs, and LaF 3 -Si. Reactions at the latter interface may be attenuated by an intermediate ordered layer of arsenic just one monolayer thick. |
| Databáze: | OpenAIRE |
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