| Autor: |
Syunsuke Izumi, Takeshi Tawara, Hidekazu Tsuchida, Kunikaza Izumi, Isaho Kamata |
| Rok vydání: |
2005 |
| Předmět: |
|
| Zdroj: |
Materials Science Forum. :323-326 |
| ISSN: |
1662-9752 |
| DOI: |
10.4028/www.scientific.net/msf.483-485.323 |
| Popis: |
We investigated the structure of the in-grown stacking faults (SFs) in the 4H-SiC epilayers. The in-grown SFs exhibited the photoluminescence (PL) peaks representing phonon replicas with bandgap of 2.710 eV. The in-grown SFs were confirmed to be triangular-shaped by PL mapping and KOH etch pit observation. High-resolution TEM image showed that the in-grown SFs have an identical stacking sequence that differ from single or double Shockley SF. In addition, the density of the in-grown SF depended on growth conditions. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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