Impurity diffusion behavior of bipolar transistor under low-temperature furnace annealing and high-temperature RTA and its optimization for 0.5- mu m Bi-CMOS process
| Autor: | M. Norishima, Hiroshi Iwai, K. Maeguchi, Y. Niitsu |
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| Rok vydání: | 1992 |
| Předmět: |
Materials science
business.industry Annealing (metallurgy) Circuit design Bipolar junction transistor Transistor Electrical engineering chemistry.chemical_element Electronic Optical and Magnetic Materials law.invention Ion implantation chemistry Impurity diffusion law Optoelectronics Electrical and Electronic Engineering business Arsenic Common emitter |
| Zdroj: | IEEE Transactions on Electron Devices. 39:33-40 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.108209 |
| Popis: | A low-temperature-processed (800-850 degrees C) bipolar transistor design suitable for the high-performance 0.5- mu m BiCMOS process is discussed. It has been found that insufficient activation of arsenic in the emitter, enhanced boron diffusion in the low-concentration base region. and insufficient arsenic diffusion from the poly Si are serious considerations if low-temperature furnace annealing is used. If high-temperature rapid thermal annealing (RTA) is used instead of low-temperature furnace annealing, these problems are resolved. Through impurity diffusion behavior and related electrical bipolar transistor design in the high-performance 0. 5- mu m Bi-CMOS process are proposed. The As-P emitter and selectively implanted collector structures, annealed using RTA, were found to be suitable for the advanced Bi-CMOS process. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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