Cycling degradation in TANOS stack
| Autor: | M. Alessandri, A. Del Vitto, G. Ghidini, A. Grossi, A. Modelli, N. Galbiati, Claudia Scozzari, E. Camerlenghi, Giulio Albini, Paolo Tessariol, T. Ghilardi |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
Silicon technology industry and agriculture Oxide chemistry.chemical_element Nitride Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Stress (mechanics) chemistry.chemical_compound Key factors chemistry Stack (abstract data type) Forensic engineering Degradation (geology) Electrical and Electronic Engineering Composite material Cycling |
| Zdroj: | Microelectronic Engineering. 86:1822-1825 |
| ISSN: | 0167-9317 |
| Popis: | The aim of this work is to investigate the physical mechanisms behind TANOS (TaN/Alumina/Nitride/Oxide/Silicon) cycling degradation. A comparison of the degradation induced in the TANOS stack by unipolar or bipolar stress has allowed the separation the different degradation contributions. A comparison with standard floating gate (FG) stack has also been carried out to confirm these degradation mechanisms. Finally, different stack configurations are reported, showing the key factors affecting the degradation and giving trends for improving cycling degradation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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