On the essence of the high photosensitivity of a-Si:H layered films
| Autor: | I. A. Kurova, N. N. Ormont |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Materials science
Silicon Annealing (metallurgy) business.industry Photoconductivity Analytical chemistry chemistry.chemical_element Conductance Plasma Condensed Matter Physics Oxygen Electronic Optical and Magnetic Materials chemistry Photosensitivity Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Order of magnitude |
| Zdroj: | Russian Microelectronics. 40:616-619 |
| ISSN: | 1608-3415 1063-7397 |
| DOI: | 10.1134/s1063739711080129 |
| Popis: | It is established that layered a-Si:H films grown by cyclic deposition with by-layer annealing in hydrogen plasma are characterized by high photosensitivity, which, at room temperature, exceeds by more than an order of magnitude the photosensitivity of regular nondoped a-Si:H films grown by deposition in the plasma of an HF glowing discharge. The high photosensitivity is determined by small dark conductance and the high photoconductance of layered films in the range of room temperature. It is demonstrated that this can be stipulated by the existence of sensitizing levels, related with higher oxygen concentrations at layer’s interface and the low concentration of broken silicon bonds in the depth of layers with a more ordered structure. |
| Databáze: | OpenAIRE |
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