| Autor: |
Digangana Khan, Balaadithya Uppalapati, Goutam Koley, Ferhat Bayram, Durga Gajula |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers). |
| Popis: |
In the recent years, studies to develop near-infrared light modulators for imaging and sensing applications have attracted great attention. Here, we report on phase transition induced optical transmittance characteristics variation of electrochromic VO 2 thin film grown on GaN membrane for light modulation application. Insulator metal transition (IMT) phase of the VO 2 thin film was triggered using an electric field applied on the interdigitated metal electrodes deposited on it. Voltage triggered phase transition resulted in ~45% change in resistance of the thin film and ~11% reduction in transmitted optical power for a 1550 nm laser. Moreover, near-infrared light modulation utilizing IMT properties of the VO 2 thin film-based membrane was demonstrated by applying various voltages with pulse widths ranging from 2 ms to 300 µs |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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