Effective Contact Resistivity Reduction for Mo/Pd/n-In0.53Ga0.47 as Contact
Autor: | Yves Mols, Clement Merckling, A. Vais, Dan Mocuta, Siva Ramesh, Hao Yu, Nadine Collaert, Kristin De Meyer, Marc Schaekers, Naoto Horiguchi, Tsvetan Ivanov, Lin-Lin Wang, Jian Zhang, Yu-Long Jiang |
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Rok vydání: | 2019 |
Předmět: |
010302 applied physics
Materials science Silicon Scanning electron microscope Annealing (metallurgy) Analytical chemistry chemistry.chemical_element 01 natural sciences Electronic Optical and Magnetic Materials chemistry Electrical resistivity and conductivity Fermi level pinning 0103 physical sciences Thermal stability Electrical and Electronic Engineering Conduction band |
Zdroj: | IEEE Electron Device Letters. 40:1800-1803 |
ISSN: | 1558-0563 0741-3106 |
DOI: | 10.1109/led.2019.2944245 |
Popis: | We compare the contact characteristics for Mo, Pd, and Ti on n-InGaAs layer with a range of active donor concentration from $1.6 \times 10^{18}$ cm−3 to $4.8 \times 10^{19}$ cm−3. The Fermi level pinning of 0.18 eV lower than the bottom of n-InGaAs conduction band is experimentally manifested. It is also revealed that the contact resistivity ( $\rho _{\text {c}}$ ) of Mo/n-InGaAs contact clearly outperforms after annealing. However, for the first time, we demonstrate that the Mo/Pd (2nm)/n-InGaAs contact can achieve a $\rho _{\text {c}}~35$ % and 20% lower than a single Mo/n-InGaAs contact after annealing at 400 °C and 450 °C for 1min, respectively. |
Databáze: | OpenAIRE |
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