Modeling and Experimental Studies of a Reactive Ion Etcher Using SF 6 / O 2 Chemistry
| Autor: | Peter M. Kopalidis, Jacob Jorne |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Silicon
Physics::Instrumentation and Detectors Renewable Energy Sustainability and the Environment Chemistry technology industry and agriculture Analytical chemistry chemistry.chemical_element Activation energy Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ion Reaction rate constant Materials Chemistry Electrochemistry Fluorine Molecule Gas composition Physics::Chemical Physics Reactive-ion etching |
| Zdroj: | Journal of The Electrochemical Society. 140:3037-3045 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2220954 |
| Popis: | A mathematical model of a showerhead‐type reactive ion etching reactor using chemistry is developed. Experimental measurements of the plasma density, electron energy, and exit gas composition are used to provide information on the gas‐phase reactions taking place and the values for the kinetic rate constants. The concentration distributions of the various molecules and radicals are obtained by solving numerically the mass balances with finite differences. Surface recombination and competition between fluorine and oxygen atoms to adsorb on the silicon surface are considered, and the chemical etch rate of silicon is calculated. A correlation between the activation energy of the etching reaction and the energy and density of bombarding ions is obtained by comparing the calculated chemical etch rate distribution with the one measured experimentally. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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