Insight into criteria for design optimisation of bistable field effect transistor (BISFET)

Autor:	A. J. SpringThorpe, R.S. Mand, J.J. Ojha, John G. Simmons
Rok vydání:	1994
Předmět:	Materials science Bistability business.industry Electrical engineering Binary compound chemistry.chemical_compound Hysteresis Terminal (electronics) chemistry Ternary compound N channel Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Gaas algaas
Zdroj:	Electronics Letters. 30:822-823
ISSN:	1350-911X 0013-5194
DOI:	10.1049/el:19940441
Popis:	The operation of the novel n-channel GaAs/AlGaAs bistable field effect transistor (BISFET) with a separate collector terminal is reported for the first time. The hysteresis in the previously reported source-loop transitions is found to increase from 0.5 V to 1 V with a negative collector bias, and the switching ratio increases from 1.5 to nearly 2. This suggests important criteria for design optimisation which dramatically enhance the potential of the BISFET for practical applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d623fe92e209612d046b2a00c31ddc9e https://doi.org/10.1049/el:19940441 Zobrazit plný text záznamu