Crystallization of vacuum deposited TeSeCu alloy film
| Autor: | Nobuhiro Funakoshi, Chiba Reiichi |
|---|---|
| Rok vydání: | 1988 |
| Předmět: |
Chemistry
Alloy Analytical chemistry Activation energy engineering.material Condensed Matter Physics Ternary alloy Electronic Optical and Magnetic Materials law.invention Amorphous solid Crystallization temperature Crystallography Differential scanning calorimetry law Materials Chemistry Ceramics and Composites engineering Crystallization |
| Zdroj: | Journal of Non-Crystalline Solids. 105:149-154 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/0022-3093(88)90349-3 |
| Popis: | The crystallization process and amorphous stability of vacuum deposited TeSeCu alloy film was studied. Dependence of crystallization temperature ( T c ) and activation energy ( E a ) on the alloy film composition was investigated by differential scanning calorimeter. The Cu concentration influences the number of crystallization stages in this ternary alloy film. Two crystallization stages with different crystallization temperatures exist, when Cu is more than 8 at% and less than 30 at%. But only one crystallization stage occurs at higher than 30 at% Cu. The most stable amorphous state is obtained at 30 at% Cu and at either Se/(Se + Te) is 8 or 15 at% Se. Addition of Se has an effect of stabilizing the amorphous state of this alloy, but the Se concentration does not influence the number of crystallization stage. When in (Te 100− x Se x 0.7 Cu 30 alloy film, the x is between 15 and 50, the very high value of activation energy (about 3.8 eV) is obtained. |
| Databáze: | OpenAIRE |
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