Degradation behavior of electrical properties of inverted metamorphic tri-junction solar cells under 1 MeV electron irradiation

Autor: Yi Wang, Huijie Zhao, Yiyong Wu, Yanqing Zhang, Chengyue Sun, Jianfeng Lu, Jianwen Xue, Jingdong Xiao, Hongbin Geng
Rok vydání: 2016
Předmět:
Zdroj: Solar Energy Materials and Solar Cells. 157:861-866
ISSN: 0927-0248
DOI: 10.1016/j.solmat.2016.08.006
Popis: In this study, the degradation effects of inverted metamorphic tri-junction (IMM3J) solar cells were investigated after 1 MeV electron irradiation using spectral response and photoluminescence (PL) signal amplitude analysis, as well as electrical property measurements. The results show that, similar to traditional tri-junction (TJ) GaInP/GaAs/Ge solar cells, the electrical properties (such as I sc , V oc , and P max ) degrade as a function of log φ , where φ represents the electron fluence. In particular, the degradation of V oc is more serious than that of I sc because of the sum rule for V oc and the limit rule for I sc in IMM3J cells. Analysis of the spectral response curves indicates that, unlike traditional TJ cells, the bottom In 0.3 Ga 0.7 As (1.0 eV) sub-cell exhibits the most severe damage in the irradiated IMM3J cells. Meanwhile, the PL amplitude measurements qualitatively confirm that the degradation in the effective minority carrier lifetime τ eff of single junction (SJ) In 0.3 Ga 0.7 As cells is more drastic than that of SJ GaAs cells after irradiation. Thus, the output current of the In 0.3 Ga 0.7 As sub-cell should be the rate-limiting cell in the irradiated IMM3J cells.
Databáze: OpenAIRE