NO2 Detection and Real-Time Sensing with Field-Effect Transistors

Autor:	Ilias Katsouras, Anne-Marije Andringa, Dago M. de Leeuw, Paul W. M. Blom, Claudia Piliego
Rok vydání:	2013
Předmět:	Fabrication Materials science Field (physics) business.industry General Chemical Engineering Transistor Gate dielectric Nanotechnology General Chemistry law.invention Threshold voltage Ambient air law Materials Chemistry Optoelectronics Field-effect transistor business Air quality index
Zdroj:	Chemistry of Materials. 26:773-785
ISSN:	1520-5002 0897-4756
DOI:	10.1021/cm4020628
Popis:	The huge impact of nitrogen dioxide (NO2) emission on public health and the environment is motivating extensive scientific and technological research in the field of NO2 sensing. Field-effect transistors have emerged as a sensitive and reliable technology for monitoring air quality, due to their amplified sensor response. In this review article, the NO2 detection mechanism with field-effect transistors is discussed. The origin is charge trapping at the gate dielectric, yielding a threshold voltage shift. The dynamic response can be described by an analytical model. Implementation in a sensor protocol allows for the fabrication of a functional demonstrator. The sensor, based on a ZnO field-effect transistor, is capable of detecting concentrations as low as 40 ppb of NO2 in real-time. The sensor operates in ambient air, and apart from drying, no further precautions are taken, showing that the fabricated sensor is selective for NO2. The results reviewed in this paper set a precedent for sensing with field-ef...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d5ffdab8c77ec0aa422a2452030eed46 https://doi.org/10.1021/cm4020628 Zobrazit plný text záznamu