Multiferroic properties of La/Er/Mn/Co multi-doped BiFeO3 thin films
| Autor: | Xue Mintao, Guo Meiyou, Ao Xia, Huijun Ren, Guoqiang Tan, Long Lv, Zhengjun Chai, Yun Liu, Xixi Ren, Jincheng Li |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Ferromagnetic material properties Condensed matter physics Process Chemistry and Technology Schottky barrier 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Ferroelectricity Grain size Surfaces Coatings and Films Electronic Optical and Magnetic Materials Electric field 0103 physical sciences Materials Chemistry Ceramics and Composites Grain boundary Multiferroics Thin film 0210 nano-technology |
| Zdroj: | Ceramics International. 45:11765-11775 |
| ISSN: | 0272-8842 |
| DOI: | 10.1016/j.ceramint.2019.03.053 |
| Popis: | Bi0.9-xLaxEr0.1Fe0.96Co0.02Mn0.02O3 (BLaxEFMCO) thin films were prepared by sol-gel method. The grain size, grain boundary resistance, oxygen vacancies and the amount of Fe2+ of the films were reduced by multi-ion doping to reduce the built-in electric field of the films. An applied voltage was adopted to regulate the effects of the directional alignment of the oxygen vacancies, defects, and defect pairs on the ferroelectric domains at the grain boundaries to control the ferroelectric polarization of the films. Meanwhile, the capacitance peak also reveals the effects of the ferroelectric domains switching, the migration of oxygen vacancies, and the directional alignment of defect pairs on the ferroelectric properties. In addition, the remnant polarization value of the BLa0.01EFMCO thin film reaches 152 μC/cm2, the squareness of the hysteresis loop (Rsq) is calculated to be 1.03, and the maximum switching current is 1.50 mA. The typical butterfly curves under positive and negative electric fields indicate the films with the enhanced ferroelectric properties. Moreover, the BLa0.01EFMCO thin film exhibits the enhanced ferromagnetic properties, and its saturation magnetization (Ms) is 2.32 emu/cm3. Therefore, the ferroelectric properties of the BFO film can be enhanced by the multi-ion doped BFO film to reduce the grain boundary resistance (Rgb), the interface Schottky barrier formed by the asymmetric electrode material at the top and bottom of the film, and the built-in electric field formed by the film internal defect or defect pairs. |
| Databáze: | OpenAIRE |
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