Direct write patterning of titanium films using focused ion beam implantation and plasma etching
| Autor: | J. M. Frank Zachariasse, John F. Walker |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Plasma etching
Materials science business.industry technology industry and agriculture Analytical chemistry chemistry.chemical_element Plasma Condensed Matter Physics Focused ion beam Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ion chemistry Resist Optoelectronics Electrical and Electronic Engineering Gallium business Lithography Titanium |
| Zdroj: | Microelectronic Engineering. 35:63-66 |
| ISSN: | 0167-9317 |
| Popis: | When titanium metal is implanted with 30 kV gallium ions and subsequently etched by SF6 plasma in a clean ECR etcher, an etch stop effect is found where the local implantation dose exceeds 5×1015 gallium ions cm−2. Implanted titanium regions remain, while un-implanted regions are etched. This process can be used as a dry lithography method, producing metal structures without the use of resist or wet development. In this paper we determine the relationship between the implanted ion dose and the remaining film thickness and apply this new resistless lithography technique to fabricate titanium wires with widths down to 0.25 μm. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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