| Autor: |
Robert Callanan, Doyle Craig Capell, Brett Hull, Michael James Paisley, Jim Richmond, Qingchun Zhang, Michael J. O'Loughlin, F. Husna, Mrinal K. Das, Adrian Powell |
| Rok vydání: |
2008 |
| Předmět: |
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| Zdroj: |
2008 20th International Symposium on Power Semiconductor Devices and IC's. |
| DOI: |
10.1109/ispsd.2008.4538946 |
| Popis: |
Rapidly improving 4 H-SiC material quality and a maturing MOS process/design have enabled the development of the largest 10 kV MOSFET to date and the first 10 kV n-IGBT capable of flowing 10 A and 4 A, respectively, with very low on- resistances. With 20 V on the gate, both devices have aVp~ 5V with a positive temperature coefficient for on-resistance that facilitates their use in a parallel configuration. Each device has its own advantages. The conductivity modulated n-IGBT offers higher current density operation (up to 100 A/cm ) while the majority carrier MOSFET offers extremely fast 5 kV switching with only 140 nsec of turn-off time and a manageable 160 W/cm of dissipated power at 20 kHz. These exciting results indicate that the 10 kV SiC NMOS switches may potentially revolutionize emerging high voltage, high frequency power electronics. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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