| Autor: |
P. Gaworzewski, M. Mai, K.H. Krebs |
| Rok vydání: |
1974 |
| Předmět: |
|
| Zdroj: |
International Journal of Mass Spectrometry and Ion Physics. 13:99-112 |
| ISSN: |
0020-7381 |
| DOI: |
10.1016/0020-7381(74)80015-x |
| Popis: |
Eletron yields are measured when atomically clean (III) surfaces of Ge, GaAs and GaP are bombarded with Ne+, Ar+ and Kr+ ions in the energy range 2–25 keV. Energy distributions of the released electrons from these materials and Si are received. The electron yields have a similar magnitude like metals and increase non-linear with increasing ion energy. The shape of the energy distributions is essentially influenced by the species of target material. By means of a model conception it is discussed that the dependence on Z1 of the electron emission is effected by the structure of the electronic shell of the bombarding ions and also the dependence on Z2 is effected by the electronic and crystallic structure of the target material. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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