Edge Effects in Bottom-Gate Inverted Staggered Thin-Film Transistors
| Autor: | Timothy J. Tredwell, Jeff Hsin Chang, Jae Kwang Um, Mallory Mativenga, Gregory N. Heiler, Jin Jang, Ravi K. Mruthyunjaya, Dong Han Kang |
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| Rok vydání: | 2012 |
| Předmět: |
Physics
Fabrication Series (mathematics) Condensed matter physics business.industry Transistor Electrical engineering Edge (geometry) Oxide thin-film transistor Electronic Optical and Magnetic Materials law.invention Thin-film transistor law Logic gate Electrical and Electronic Engineering business Communication channel |
| Zdroj: | IEEE Transactions on Electron Devices. 59:2501-2506 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2012.2205258 |
| Popis: | For thin-film transistor (TFT) characterization and simulation, accurate knowledge of the effective channel width ( $W_{\rm EFF}$ ) and effective channel length ( $L_{\rm EFF}$ ) is required, particularly in narrow and/or short devices, where small dimensional variations may result in large overestimation/underestimation of device parameters. Although a substantial amount of research has been done to determine $L_{\rm EFF}$ , there is very little work presented regarding $W_{\rm EFF}$ . Here, we report a design-related existence of current leakage paths along the channel edges in inverted staggered TFT structures. Applied here for the case of amorphous-silicon- and amorphous-oxide-semiconductor-based TFTs, a model is developed to investigate the edge effect from a series of TFTs with various channel widths ( $W$ ). $W_{\rm EFF}$ is found to be larger than the designed $W$ , resulting in an overestimation of the extracted TFT parameters such as the field-effect mobility. It is concluded that a preferred TFT design consists of source and drain electrodes that extend over the active area along the $W$ direction to minimize the edge effects and, hence, improve the accuracy of the extracted TFT parameters. |
| Databáze: | OpenAIRE |
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