Soft- and Hard-Error Radiation Reliability of 228 KB $3\mathrm{T}+1\mathrm{C}$ Oxide Semiconductor Memory

Autor:	H. Takahashi, Y. Okamoto, T. Hamada, Y. Komura, S. Watanabe, K. Tsuda, H. Sawai, T. Matsuzaki, Y. Ando, T. Onuki, H. Kunitake, S. Yamazaki, D. Kobayashi, A. Ikuta, T. Makino, T. Ohshima
Rok vydání:	2023
Zdroj:	2023 IEEE International Reliability Physics Symposium (IRPS).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d5ddfdc595e5b2e5fa797f5550859982 https://doi.org/10.1109/irps48203.2023.10118302 Zobrazit plný text záznamu