Strain and misfit dislocation density in finite lateral size Si1−x Gex films grownby selective epitaxy
| Autor: | Bernhard Holländer, S. Mesters, L. Vescan, S. Wickenhäuser |
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| Rok vydání: | 1997 |
| Předmět: |
Photoluminescence
Materials science Condensed matter physics Metals and Alloys Nucleation Surfaces and Interfaces Chemical vapor deposition Rutherford backscattering spectrometry Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials Crystallography Transmission electron microscopy Quantum dot Materials Chemistry Dislocation |
| Zdroj: | Thin Solid Films. 292:213-217 |
| ISSN: | 0040-6090 |
| Popis: | Strain and misfit dislocation density in small-area Si 1− x Ge x filmsgrown by selective low-pressure chemical vapour deposition on Si (100)have been investigated as a function of lateral size by Rutherford backscattering spectrometry, ion channeling, photoluminescence spectroscopy and transmission electron microscopy. The results show that a large-area Si 0.84 Ge 0.16 film with a thickness of 430 nm has relieved more than 60% of the pseudomorphic strain by formation of misfit dislocations while 100X100 μ 2 square-shaped structures exhibit full pseudomorphic strain. In comparison to large-area growth, a significant decrease of the dislocation density was already observed in structures as largeas 5000X300 μ 2 . The experimental results are in good agreement with theoretical estimations assuming a fixed density of nucleation sources. Selective growth and size-dependent reduction of the dislocation density may be important regarding future device applications and low dimensional semiconductor heterostructures as quantum wires and quantum dots based on the Si/Si 1− x Ge x materials system. |
| Databáze: | OpenAIRE |
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