A Thermodynamic Model for the Hydrogen Incorporation in PECVD Silicon Oxynitrides Thin Layers

Autor:	S. Viscaïno, Y. Cros, W. M. Arnold Bik, F. H. P. M. Habraken
Rok vydání:	1992
Předmět:	Thermodynamic model Materials science Thin layers Hydrogen chemistry Chemical engineering Silicon Plasma-enhanced chemical vapor deposition Inorganic chemistry chemistry.chemical_element Constant (mathematics) Amorphous solid
Zdroj:	MRS Proceedings. 284
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-284-363
Popis:	In the PECVD SixNyHzOw the hydrogen is principally incorporated as N-H bonds. For O/(O+N) below 0.4, the %H is constant at 25%; from 0.4 to 1, it decreases to 4%. We show that a chemical ordered model is likely to describe the hydrogen incorporation in the amorphous network while a random bond model fails.
Databáze:	OpenAIRE
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