| Autor: |
Shen Hue Sun, Joachim N. Burghartz, Daniel B. Etter, Ingo Herrmann, Fabian Utermohlen |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
2013 International Semiconductor Conference Dresden - Grenoble (ISCDG). |
| Popis: |
A model for the electrical behavior of pn-junction diodes biased in forward direction and used as a temperature sensitive device (TSD) in microbolometers is presented. It is based on the well-known Shockley equation extended by the ideality factor m. We demonstrate that the largest temperature sensitivity can be reached for diodes at low current density operation featuring a high ideality factor m > 1. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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