Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection

Autor:	Paul E. Dodd, Dolores A. Black, A.D. Tipton, M.A. Xapsos, Daniel M. Fleetwood, William H. Robinson, Jeffrey D. Black, Ronald D. Schrimpf, Kevin M. Warren, Hak Kim, M. Friendlich, Dennis R. Ball, Nadim F. Haddad, Robert A. Reed
Rok vydání:	2008
Předmět:	Nuclear and High Energy Physics Engineering Resistive touchscreen Hardware_MEMORYSTRUCTURES business.industry Transistor Hardware_PERFORMANCEANDRELIABILITY Upset law.invention Nuclear Energy and Engineering law Single event upset Electronic engineering State (computer science) Static random-access memory InformationSystems_MISCELLANEOUS Electrical and Electronic Engineering business Test data Electronic circuit
Zdroj:	IEEE Transactions on Nuclear Science. 55:2943-2947
ISSN:	0018-9499
DOI:	10.1109/tns.2008.2007231
Popis:	A well-collapse source-injection mode for SRAM SEU is demonstrated through TCAD modeling. The recovery of the SRAM's state is shown to be based upon the resistive path from the p+ -sources in the SRAM to the well. Multiple cell upset patterns for direct charge collection and the well-collapse source-injection mechanisms are predicted and compared to SRAM test data.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d5c4c1e7f4fcaee1769fcdee60782085 https://doi.org/10.1109/tns.2008.2007231 Zobrazit plný text záznamu