Stimulated crystallization of thermal silica films. i. heat treatment

Autor:	V. V. Khatko, N. V. Rumak
Rok vydání:	1986
Předmět:	Materials science Chemical engineering Homogeneous law Annealing (metallurgy) Fixed charge Thermal Crystallization Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Solid solution
Zdroj:	physica status solidi (a). 95:391-395
ISSN:	1521-396X 0031-8965
DOI:	10.1002/pssa.2210950204
Popis:	The interdependence is studied between the changing state of a solid solution of homogeneous structure in submicropores and the value of a fixed charge in thermal films of silica subjected to annealing. The results obtained support the conclusion about the predominant contribution of SiO2phase-structural transformations to the formation of charge properties of the system SiSiO2 and enable one to judge about the mechanisms of these transformations. [Russian Text Ignored].
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d5c1b349bb56fff2fa94b903ecb0fb72 https://doi.org/10.1002/pssa.2210950204 Zobrazit plný text záznamu Plný text