The Influence of Drift-Diffusion Processes onI–V Characteristics of Si Schottky Diodes

Autor:	A. L. Guerassimov, E. I. Kafedjiiska, S. Simeonov
Rok vydání:	1993
Předmět:	Silicon business.industry Schottky barrier Doping chemistry.chemical_element Schottky diode Thermionic emission Condensed Matter Physics Metal–semiconductor junction Electronic Optical and Magnetic Materials chemistry Optoelectronics Diffusion (business) business Voltage
Zdroj:	Physica Status Solidi (a). 136:393-400
ISSN:	1521-396X 0031-8965
DOI:	10.1002/pssa.2211360212
Popis:	A more accurate approximation for the diffusion velocity in the space-charge layer of Schottky diodes is obtained. The influence of the dependence of the diffusion velocity on the applied voltage to the slope of I–V characteristics, calculated by the combined thermionic emission-diffusion theory of current in Schottky diodes, is taken into account. It is shown that this influence is of the same magnitude as the image force effect on I–V characteristics of Schottky diodes on Si substrates with donor doping around 1015 cm−3. [Russian Text Ignored.]
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d5b9f3c4d41ef3ce64b70e996996f578 https://doi.org/10.1002/pssa.2211360212 Zobrazit plný text záznamu Plný text