RF Power Analysis on 5.8 GHz Low-Power Amplifier Using Resonant Tunneling Diodes
| Autor: | Kyounghoon Yang, Jongwon Lee |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Physics
Power gain business.industry Amplifier 020208 electrical & electronic engineering RF power amplifier Electrical engineering 020206 networking & telecommunications 02 engineering and technology Condensed Matter Physics Power (physics) Harmonic balance 0202 electrical engineering electronic engineering information engineering Return loss Optoelectronics Radio frequency Electrical and Electronic Engineering business Diode |
| Zdroj: | IEEE Microwave and Wireless Components Letters. 27:61-63 |
| ISSN: | 1558-1764 1531-1309 |
| Popis: | This letter reports the analysis of RF power characteristics in a microwave amplifier using resonant tunneling diodes (RTDs). The implemented IC shows a return loss of more than 11 dB with a low dc-power consumption of 0.42 mW and a power gain of 8.6 dB at 5.8 GHz. The maximum linear RF output power with a uniform gain of 8.6 dB is measured to be −25.4 dBm at the same frequency. The gain hump phenomenon is observed in an input power range from −32 dBm to −16 dBm, and is shown to arise from a sudden movement of the operating point from the negative differential resistance (NDR) region to the positive differential resistance (PDR) region, based on a large-signal load-line analysis together with a harmonic balance simulation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|