Comparison of CuxS Films Grown by Atomic Layer Deposition and Chemical Vapor Deposition

Autor:	Joop Schoonman, Ben Meester, Frits De Lange, Albert Goossens, Liesbeth Reijnen
Rok vydání:	2005
Předmět:	Phase transition Materials science General Chemical Engineering chemistry.chemical_element Nanotechnology General Chemistry Chemical vapor deposition Copper Gas phase Atomic layer deposition chemistry Chemical engineering Materials Chemistry Thin film
Zdroj:	Chemistry of Materials. 17:2724-2728
ISSN:	1520-5002 0897-4756
DOI:	10.1021/cm035238b
Popis:	Thin films of CuxS are deposited by both chemical vapor deposition (CVD) and atomic layer deposition (ALD) using copper bis-tetramethylheptanedionate, Cu(thd)2, and H2S as the precursors. Single-phase CuS and Cu1.8S can be deposited using both techniques, while in CVD also mixed phases can be formed. Comparing the ALD process with the CVD process leads to a better understanding of the reaction chemistry of both processes. The main factor is the decomposition of Cu(thd)2 at 175 °C, which leads to a phase transition from CuS to Cu1.8S in ALD and deposition of mixed phases in CVD. Consequently, the phase transition is sharp in ALD and gradual in CVD. At temperatures higher than 250 °C, decomposition of Cu(thd)2 occurs in the gas phase, leading to a transition from a reaction-limited regime to a thermodynamic regime in CVD and to loss of uniformity and homogeneity in ALD.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d5afcfeada9d216599d913310fc45b98 https://doi.org/10.1021/cm035238b Zobrazit plný text záznamu