An XPS study of the composition of iridium films obtained by MO CVD
| Autor: | R.I. Kwon, I.K. Igumenov, N.V. Gelfond, M. Yu. Smirnov, Valerii I. Bukhtiyarov, Igor P. Prosvirin, Andrei I. Boronin |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Analytical chemistry
chemistry.chemical_element Surfaces and Interfaces Chemical vapor deposition Condensed Matter Physics Surfaces Coatings and Films law.invention chemistry X-ray photoelectron spectroscopy Transition metal law Monolayer Materials Chemistry Iridium Thin film Crystallization Layer (electronics) |
| Zdroj: | Surface Science. 275:323-331 |
| ISSN: | 0039-6028 |
| DOI: | 10.1016/0039-6028(92)90804-f |
| Popis: | Iridium films were deposited on flat quartz substrates by MO CVD from iridium tris-acetilacetonate; these processes were performed at atmospheric pressure in the presence of hydrogen, and substrate temperatures were varied in the range 350–550°C. X-ray photoelectron spectroscopy was used to study film composition: carbon- and oxygen-containing impurities (up to one monolayer) are present on the surface of all the films. During etching by argon ions up to the film-substrate boundary only iridium lines were observed in the spectra. Subsequent etching results in the decrease of the intensity of the iridium lines and the appearance of lines of the substrate material — Si2p, Si2s and O 1s. In the region of the IrSiO 2 boundary there is a transition layer where a compound of the type IrSi x O y is formed. The thickness of this layer increases with increasing deposition temperature. For films deposited at T > 500°C differential charging effects were found, i.e. the samples contain two phases - conductive and nonconductive ones. This might be due to the crystallization of two phases - metallic and “silicate”. The existence of differential charging can also be explained by grain size effects which depend on the deposition temperature. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|