| Autor: |
Robert L. Opila, Christiana B. Honsberg, Balakrishnam Jampana, Ian T. Ferguson, Muhammad Jamil, Andrew Melton |
| Rok vydání: |
2009 |
| Předmět: |
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| Zdroj: |
2009 34th IEEE Photovoltaic Specialists Conference (PVSC). |
| DOI: |
10.1109/pvsc.2009.5411402 |
| Popis: |
The III-nitride material system offers substantial potential to develop high-efficiency solar cells. The solar cell operation requires the formation of a depletion region. Conventionally, this is achieved by a p-n junction. The piezoelectric polarization introduces a strong band bending at the hetero-junction interface and hence creating a depletion region. The growth of a thin AlN or GaN epi-layer on InGaN introduces the required piezoelectric polarization to create a depletion region. This paper presents the polarization-incorporated simulations in “Silense” showing the depletion region formation by GaN or AlN epilayers on p-InGaN. Three structures are then MOCVD grown and characterized for crystal quality and electrical properties. The fabricated devices demonstrated the diode characteristics with an open-circuit voltages ≫ 2.0 V. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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