Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
| Autor: | Po-Tsun Liu, Chih Hsiang Chang, Chur Shyang Fuh |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Passivation business.industry General Chemical Engineering chemistry.chemical_element 02 engineering and technology General Chemistry Activation energy 021001 nanoscience & nanotechnology 01 natural sciences Amorphous solid Secondary ion mass spectrometry chemistry Plasma-enhanced chemical vapor deposition Thin-film transistor 0103 physical sciences Optoelectronics 0210 nano-technology business Layer (electronics) Indium |
| Zdroj: | RSC Advances. 6:106374-106379 |
| ISSN: | 2046-2069 |
| DOI: | 10.1039/c6ra22423g |
| Popis: | We studied the influence of the backchannel passivation layer (BPL) on the ambient stability of amorphous indium-zinc-tin-oxide thin-film transistors (a-IZTO TFTs), in which atomic layer deposited (ALD) Al2O3 films and plasma-enhanced chemical vapor deposited (PECVD) SiO2 films were separately used to be the channel passivation layers. It was observed that the BPL deposition process strongly affects device performance and stability. From the results of the extracted activation energy (Eact), the Al2O3 passivation layer can reduce the trap density in localized tail states, which improves the mobility of a-IZTO TFTs. Compared with the SiO2 passivation layer, the Al2O3 passivation process effectively suppresses H injection into the a-IZTO channel layer underneath with secondary ion mass spectrometer analysis. In addition, it is found that the a-IZTO TFT with the Al2O3 passivation layer can enhance resistance against negative bias illumination stress (NBIS), making it reliable for realistic operation in flat panel displays. |
| Databáze: | OpenAIRE |
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