| Autor: |
Yuan-Peng Li, Xin Zhou, Hong-Tao Wei, Lu Cui |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). |
| Popis: |
In this paper, the design and fabrication of a 12-22 GHz monolithic integrated GaAs PIN-diodes and pseudomorphic high-electron mobility transistors (pHEMTs) limiter low noise amplifier (limiter-LNA) is proposed. A multi-branch limiter with the antiparallel PIN-diode topology is employed to enhance the power capacity of the limiter-LNA. The PIN-diode based limiter-LNA can work in 10W continuous wave power. The fabricated limiter-LNA demonstrated an average small signal gain of 26 dB, a noise figure (NF) of less than 2.7 dB over 12-22 GHz frequency range. The output power at 1dB compression point (P1dB) is larger than 10 dBm and the chip size is 3.0 mm×1.1 mm. Compared with the traditional hybrid integrated circuit, this chip has smaller size and better RF performance. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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