Thin film sensors on the basis of chalcogenide glass materials prepared by pulsed laser deposition technique
| Autor: | C. Schmidt, Andrey Legin, B.L. Seleznev, Peter Kordos, S Mesters, Hans Lüth, Michael J. Schöning, Willi Zander, Jürgen Schubert, Yu. G. Vlasov |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Materials science
business.industry Metals and Alloys Analytical chemistry chemistry.chemical_element Chalcogenide glass Condensed Matter Physics Rutherford backscattering spectrometry Copper Surfaces Coatings and Films Electronic Optical and Magnetic Materials Pulsed laser deposition chemistry Transmission electron microscopy Electrode Materials Chemistry Optoelectronics Electrical and Electronic Engineering Thin film business Instrumentation Layer (electronics) |
| Zdroj: | Sensors and Actuators B: Chemical. 68:254-259 |
| ISSN: | 0925-4005 |
| Popis: | Potentiometric thin film sensors on the basis of the two different chalcogenide glass materials Ag-As-S and Cu-Ag-As-Se-Te have . been prepared by means of the pulsed laser deposition PLD technique onto SirSiO substrates with an additional contact layer of 2 CrrAu and TirPt, respectively. The physical layer structure and the stoichiometric composition of the deposited glass materials have . . been investigated by means of Rutherford backscattering spectrometry RBS and transmission electron microscopy TEM . Depending on the material systems used, in a conventional Atwo-electrodesB measuring set-up, these novel thin film sensors possess a high sensitivity . . . . towards lead 23-25 mVrpPb , copper 29-31 mVrpCu , cadmium 23-27 mVrpCd and silver about 54 mVrpAg over a measuring period of more than 60 days. The obtained results are in good accordance when comparing them to measurements performed with conventional bulk ion-selective electrodes, built-up of the same layer composition. q 2000 Elsevier Science S.A. All rights reserved. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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