Growth of n-type Bi 2 Te 2.55 Se 0.45 single crystal solid solution by the Travelling Heater Method

Autor: C. Lahalle-Gravier, H. Scherrer, S. Scherrer
Rok vydání: 1996
Předmět:
Zdroj: Journal of Physics and Chemistry of Solids. 57:1713-1717
ISSN: 0022-3697
DOI: 10.1016/0022-3697(96)00044-3
Popis: Bi2Te2.55Se0.45 single crystal solid solution has been grown using the Travelling Heater Method. This method requires the knowledge of the phase diagram, so the first step of this work was studying the Bi Te Se ternary phase diagram in order to determine the isoconcentration line of the Bi2Te2.55Se0.45 solid solution within a 550 °C–590 °C temperature range. The knowledge of this phase diagram allows us to thermodynamically grow homogeneous ingots. The solidus line has been determined in terms of deviations from the stoichiometry, on the Te rich side, by Hall effect measurements.
Databáze: OpenAIRE