Oxygen Gas Dependence of IGZO Thin Film for TFT Channel Layer

Autor:	Kyung Hwan Kim, Yu-sup Jung, Kyu-Ho Lee
Rok vydání:	2011
Předmět:	Materials science business.industry Analytical chemistry General Chemistry Condensed Matter Physics Amorphous solid Threshold voltage Semiconductor Sputtering Thin-film transistor General Materials Science Thin film business Layer (electronics) Diffractometer
Zdroj:	Molecular Crystals and Liquid Crystals. 550:212-218
ISSN:	1563-5287 1542-1406
DOI:	10.1080/15421406.2011.599748
Popis:	Amorphous indium-gallium-zinc-oxide (a-IGZO) thin films on glass were prepared using facing target sputtering (FTS) methods by different oxygen flow rates at room temperature. The a-IGZO films were used as a channel layer for thin film transistors (TFTs). The electrical, optical, and structural properties of a-IGZO thin films were measured by Hall Effect measurement, UV/VIS spectrometer and X-ray diffractometer. The performance and device characteristics of the a-IGZO TFTs were measured by semiconductor parameter analyzer. The transfer characteristics of a-IGZO TFTs saturation exhibited mobility of 19.42 cm2/V.s and the threshold voltage of 4.18 V.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d586c7fbcdeaa6475b385ab4a375da33 https://doi.org/10.1080/15421406.2011.599748 Zobrazit plný text záznamu