Pentacene-Thin Film Transistors with ZrO[sub 2] Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
| Autor: | Jae Bon Koo, Sun Jin Yun, Jung Wook Lim, Seong Hyun Kim |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Electron mobility
Materials science business.industry General Chemical Engineering Gate dielectric Dielectric Threshold voltage Pentacene chemistry.chemical_compound Atomic layer deposition chemistry Thin-film transistor Electrochemistry Surface roughness Optoelectronics General Materials Science Electrical and Electronic Engineering Physical and Theoretical Chemistry business |
| Zdroj: | Electrochemical and Solid-State Letters. 10:H90 |
| ISSN: | 1099-0062 |
| Popis: | The effect of the dielectric constant and surface roughness of gate dielectrics on the electrical performance of pentacene-thin-film transistor (TFT) was investigated using high-K ZrO 2 films deposited by plasma-enhanced atomic layer deposition. The dielectric constant of ZrO 2 (κ ZrO 2 ) was in the range of 15.6-33.0, and the surface roughness was increased with κ ZrO 2 in the presently reported devices. Threshold voltage and subthreshold swing were effectively reduced with increasing κ ZrO 2 and were remarkably low, with values of -0.42 V and 0.15 V/dec, respectively, when κ ZrO 2 = 33.0. To the contrary, the carrier mobility was determined by the surface roughness of ZrO 2 gate dielectrics. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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