Recessed source concept in nanoscale vertical surrounding gate (VSG) MOSFETs for controlling short-channel effects

Autor:	M. Jagadesh Kumar, Boyapati Subrahmanyam
Rok vydání:	2009
Předmět:	Coupling Nanostructure Materials science business.industry Semiconductor device Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials MOSFET Optoelectronics Nanoscale mosfet business Nanoscopic scale Lithography Communication channel
Zdroj:	Physica E: Low-dimensional Systems and Nanostructures. 41:671-676
ISSN:	1386-9477
DOI:	10.1016/j.physe.2008.11.007
Popis:	In the recent past, vertical surrounding gate (VSG) MOSFETs have gained importance since defining their nanoscale channel length no longer depends on lithographic limitations and since they can lead to high packing densities. However, as the channel lengths decrease below 100 nm, VSG MOSFETs too suffer from short-channel effects due to the coupling between the drain and source side charges. In this paper, we demonstrate that using a recessed source, the short-channel effects in nanoscale VSG MOSFETs can be effectively controlled.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d576ce267d4d77d5cdb2e16d9ff3616e https://doi.org/10.1016/j.physe.2008.11.007 Zobrazit plný text záznamu Full Text from ScienceDirect