Comparative study of Cu(In,Ga)Se2/CdS and Cu(In,Ga)Se2/In2S3 systems by surface photovoltage techniques
| Autor: | Martha Ch. Lux-Steiner, A. Gonzáles, Thorsten Rissom, Elisabeth Zillner, Sascha Sadewasser, Th. Dittrich, T. Rada |
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| Rok vydání: | 2013 |
| Předmět: |
Kelvin probe force microscope
Materials science Fixed capacitor Passivation business.industry Surface photovoltage Metals and Alloys Analytical chemistry Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials Electron transfer Semiconductor Materials Chemistry business Deposition (law) Surface states |
| Zdroj: | Thin Solid Films. 535:357-361 |
| ISSN: | 0040-6090 |
| Popis: | Cu(In,Ga)Se 2 absorbers were investigated by surface photovoltage (SPV) in the Kelvin probe and fixed capacitor arrangements before and after deposition of CdS or In 2 S 3 buffer layers as well as before and after deposition of ZnO window layers. Effects such as passivation of surface states, partial electron transfer from ZnO into In 2 S 3 , decrease of the ideality factor after deposition of ZnO and slow electron transfer through In 2 S 3 were demonstrated. The results show that SPV measurements open opportunities for dedicated studies of charge separation at hetero-junctions between ordered and disordered semiconductors. |
| Databáze: | OpenAIRE |
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