Exploring the limits of pre-amorphization implants on controlling channeling and diffusion of low energy B implants and ultra shallow junction formation

Autor:	S. Tandon, R. Murto, C. Ferguson, L. Larson, Abhilash J. Mayur, D. Wagner, Majeed A. Foad, D. Sing, Amir Al-Bayati
Rok vydání:	2003
Předmět:	Surface diffusion Materials science Ion implantation business.industry Doping Electronic engineering Optoelectronics Implant Diffusion (business) business Crystallographic defect Layer (electronics) Amorphous solid
Zdroj:	2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).
DOI:	10.1109/iit.2000.924088
Popis:	Reducing channeling of B implants and transient enhanced diffusion (TED) is very critical for the formation of ultra shallow junctions required for deep sub-micron devices. As the ion energy required for junction formation is reduced (
Databáze:	OpenAIRE
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