Multiparametric measurements of epitaxial semiconductor structures with the use of one-dimensional microwave photonic crystals
| Autor: | D. A. Usanov, S. A. Nikitov, E. V. Latysheva, D. V. Ponomarev, A. V. Skripal |
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| Rok vydání: | 2016 |
| Předmět: |
Radiation
Materials science Magnetoresistance business.industry Doping Substrate (electronics) Condensed Matter Physics Epitaxy 01 natural sciences 010305 fluids & plasmas Electronic Optical and Magnetic Materials Crystal Condensed Matter::Materials Science Optics Semiconductor Condensed Matter::Superconductivity 0103 physical sciences Optoelectronics Charge carrier Electrical and Electronic Engineering 010306 general physics business Microwave |
| Zdroj: | Journal of Communications Technology and Electronics. 61:42-49 |
| ISSN: | 1555-6557 1064-2269 |
| DOI: | 10.1134/s1064226916010125 |
| Popis: | The possibility of measuring simultaneously the thickness of the substrate of a semiconductor structure and the thickness and conductivity of a highly doped epitaxial layer is shown in the case when the semiconductor layer plays the role of a distortion of the periodicity of a microwave photonic crystal. For measuring the mobility of free charge carriers in the highly doped epitaxial layer, a modified method of microwave magnetoresistance based on solving the inverse problem with the use of frequency dependences of the transmission and reflection coefficients measured under the action of the magnetic field in the its absence is proposed. |
| Databáze: | OpenAIRE |
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