Co-Diffusion Processing of p+/n/n+ Structure for n-Type Silicon Solar Cells Using Boron Doped Paper Sheets
| Autor: | A. Boucheham, B. Labdelli, R. Si-Kaddour, A. El Amrani, A. Guendouzi, C. Nasraoui |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Diffusion barrier Silicon Analytical chemistry chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Silicon nitride 0103 physical sciences Wafer 0210 nano-technology Boron Short circuit Sheet resistance Common emitter |
| Zdroj: | Silicon. 14:223-228 |
| ISSN: | 1876-9918 1876-990X |
| Popis: | In this work we designed, fabricated and assessed a p+/n/n+ structure which constitute the basis and the core part of the n-type silicon solar cells. The process of fabrication is based on the co-diffusion of pre-deposited phosphorus and boron. It consists of carrying out simultaneously in one single high temperature step the diffusion of both boron and phosphorus of the p+ emitter and pre-deposited n+- back surface field (BSF), respectively. The first step was the pre-formation of the n+-BSF in a POCl3 furnace system. After depositing the silicon nitride film onto the wafers rear side as a diffusion barrier to protect them from being boron doped, the wafers underwent an alkaline bath to etch the phosphorus layer of the front side. Onto this latter we used a boron source paper sheets to create a p+ emitter (preform source) simultaneously with n+-BSF drive-in step. This co-diffusion process was carried out at a temperature of 930 °C in a quartz tube devoted to this purpose. The resulting structure has a sheet resistance of 49 Ω/□ and 39 Ω/□ for emitter and BSF, respectively, corresponding to junction depths of 0.40 μm and 0.55 μm. The dopants surface concentrations are of 1.14 E20 atoms. cm−3 and 6.20 E19 atoms. cm−3 for emitter and BSF, respectively. This p+/n/n+ structure was used to fabricate solar cells after passivating the emitter and screen printing the front and rear side metallic contacts. A short circuit current density of 31.60 mA/cm2, an open circuit voltage of 555 mV and an efficiency of 10.70% was measured indicating that our non-optimized fabrication process and the resultant device is viable. |
| Databáze: | OpenAIRE |
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