Residual stress in the carrier tape AISI 310S at the stage of deposition of the YSZ buffer layer when manufacturing of HTS-2G wire

Autor: null Em V.T., null Shavkin S.V., null Krylov V.E., null Kruglov V.S., null Karpov I.D., null Irodova A.V.
Rok vydání: 2022
Zdroj: Technical Physics. 67:2391
ISSN: 1726-748X
DOI: 10.21883/tp.2022.15.55265.169-21
Popis: Using neutron diffraction we determined internal residual stress in the stainless steel AISI 310S carrier tape with a thickness of 100 μm and a width of 4 mm after mechanical polishing and the ABAD deposition of the textured YSZ buffer layer. It is shown that mechanical polishing causes a slight distension of the tape in the rolling plane. After the deposition of the YSZ layer, uniform tensile stress of 70 MPa isotropic in the rolling plane was observed inside the tape. Calculations have shown that it results from relaxation of compressive stress acting on the surface of the tape in a layer several times thicker than the YSZ layer. It is assumed that the surface of the tape is plastically deformed during the YSZ deposition. Keywords: residual stress, YSZ buffer layer, HTS-2G wire, AISI 310S carrier tape, neutron stress diffractometry.
Databáze: OpenAIRE