Amorphous silicon–germanium for triple and quadruple junction thin-film silicon based solar cells
| Autor: | Linus Lofgren, Simon Hänni, Franz-Josef Haug, Mathieu Boccard, Maximilien Bonnet-Eymard, Matthieu Despeisse, Christophe Ballif, Jan-Willem Schüttauf, Bjoern Niesen, Grégory Bugnon, Fanny Meillaud, Michael Stuckelberger |
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| Rok vydání: | 2015 |
| Předmět: |
Amorphous silicon
Materials science Silicon Renewable Energy Sustainability and the Environment business.industry Triple junction chemistry.chemical_element Nanotechnology Surfaces Coatings and Films Electronic Optical and Magnetic Materials Silicon-germanium Amorphous solid chemistry.chemical_compound Microcrystalline chemistry Optoelectronics Thin film business Layer (electronics) |
| Zdroj: | Solar Energy Materials and Solar Cells. 133:163-169 |
| ISSN: | 0927-0248 |
| Popis: | We study amorphous silicon-germanium (a-SiGe:H) as intrinsic absorber material for thin-film silicon-based triple and quadruple junction solar cells. First, we present the development of a-SiGe:H single junction devices, in particular the Ge-content grading in the absorber layer, the influence of the Ge-content on electrical properties and (infra)red-response, and the influence of using different types of players. We subsequently show the incorporation of optimized single-junction devices in triple junction cells and discuss the interplay between Ge-content and intermediate reflector thickness. For triple junction devices with amorphous silicon (a-Si:H) top cells, a-SiGe:H middle cells and microcrystalline silicion (mu c-Si:H) bottom cells, we obtained an initial efficiency of 13.6% and an efficiency of 11.3% after light-soaking. We also present a quadruple junction device with an a-Si:H top cell, a low Ge-content a-SiGe:H second cell, and mu c-Si:H third and bottom cells. In this device configuration, we obtained an open-circuit voltage as high as 2.57 V. The performance of these cells was limited by not yet optimized current matching, leading nevertheless to an initial efficiency of 10.1%. A brief roadmap towards quadruple-junction devices with stabilized efficiencies of 14% is also outlined. (C) 2014 Elsevier B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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