GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion
| Autor: | B. De Jaeger, Guido Groeseneken, Thibault Cosnier, Shuzhen You, Denis Marcon, Karen Geens, Dirk Wellekens, Robert Langer, Nooshin Amirifar, Ming Zhao, W. Guo, Benoit Bakeroot, Hu Liang, Stefaan Decoutere, Steve Stoffels, B. Vanhove, Xiangdong Li, Niels Posthuma |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Buck converter business.industry 020208 electrical & electronic engineering Silicon on insulator Schottky diode 02 engineering and technology High-electron-mobility transistor 01 natural sciences law.invention Capacitor law Modulation 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Resistor business Pulse-width modulation |
| Zdroj: | 2019 IEEE International Electron Devices Meeting (IEDM). |
| Popis: | We report the first comprehensive research about GaN power integrated circuits (ICs) on GaN-on-SOI (silicon-on-insulator). Specific stepped (Al)GaN superlattice buffer and highly robust deep trench isolation are developed. Various components including HEMT, metal-insulator-metal (MIM) capacitor, Schottky barrier diode (SBD), two-dimensional electron gas (2DEG) resistor, and resistor-transistor logic (RTL) are co-integrated, compatible with the p-GaN technology. Based on these achievements, 200 V GaN HEMT with integrated driver shows an extraordinary switching performance. A 48V-to-1V single-stage buck converter is realized using a GaN half-bridge with integrated on-chip drivers. Further, an all-GaN buck converter containing a smart control pulse-width modulation (PWM) circuit, dead-time control, drivers, and half-bridge is successfully designed using the GaN IC platform process design kit (PDK). |
| Databáze: | OpenAIRE |
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