Investigation of indium doping in InGaAs/GaAs/AlGaAs graded‐index separated confinement heterostructure lasers
| Autor: | K. L. Tsai, Chia-Ming Tsai, Hou-Ren Chen, C. P. Lee, D. C. Liu, J. S. Tsang |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Materials science
business.industry Doping General Physics and Astronomy chemistry.chemical_element Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser law.invention Semiconductor laser theory Condensed Matter::Materials Science chemistry law Optoelectronics Quantum well laser business Quantum well Indium Molecular beam epitaxy |
| Zdroj: | Journal of Applied Physics. 74:4882-4885 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.354319 |
| Popis: | The effect of indium doping in the graded‐index regions of the InGaAs/GaAs/AlGaAs graded‐index separated confinement heterostructure quantum well laser has been studied. It was found that the threshold current density can be greatly reduced by a proper amount of In doping in the graded AlGaAs region. This result is attributed to an improvement in material quality due to a reduction in group III vacancies. The effect of thermal treatment on laser performance has also been studied. Although high temperature annealing can significantly improve non‐In‐doped lasers, it has little effect on In‐doped lasers. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|