Atomic migration in molten and crystalline Ge2Sb2Te5 under high electric field

Autor: Il-Mok Park, Tae-Youl Yang, Byoung-Joon Kim, Young-Chang Joo
Rok vydání: 2009
Předmět:
Zdroj: Applied Physics Letters. 95:032104
ISSN: 1077-3118
0003-6951
DOI: 10.1063/1.3184584
Popis: Atomic migration under an electric field, electromigration, in molten and crystalline Ge2Sb2Te5 was studied using a pulsed dc stress to an isolated line structure. Under a single pulse (∼10−3 s), Ge2Sb2Te5 was melted by Joule heating, and an electrostatic force-induced drift of Ge and Sb toward the cathode and Te toward the anode was observed. Effective charge numbers were calculated to be 0.28, 0.38, and −0.29 for Ge, Sb, and Te, respectively. Electromigration in the crystalline state was studied by applying a 10 MHz pulsed dc; constituent elements migrated toward the cathode, which suggests a hole wind-force operating in this phase.
Databáze: OpenAIRE