| Autor: |
Alexander Grichener, Jacob Jensen, Yeonjoon Park, Sang H. Choi |
| Rok vydání: |
2005 |
| Předmět: |
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| Zdroj: |
Integrated Optics: Devices, Materials, and Technologies IX. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.590364 |
| Popis: |
We studied various electrical and optical properties of Europium (1 atomic %) incorporated BaTiO 3 film on n-Si(100) substrate. The thin film structure was analyzed by X-ray diffraction. Film thickness and optical refractive index were measured with an ellipsometer. P-E hysteresis measurement shows the remnant polarization of 37μC/cm 2 in BaTiO 3 :Eu film. C-V measurements on the pure BaTiO 3 film show recovery of capacitance across sweeping voltage ranges with a narrow transition zone due to the polarization change. On the other hand, C-V and I-V measurements on the BaTiO 3 :Eu film show that Europium incorporation increases positively charged states in the BaTiO 3 layer such that BaTiO 3 :Eu/n-Si interface behaves like a leaky p-n junction. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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