Nitrogen-induced band formation in GaNxAs1−xstudied by photoluminescence under hydrostatic pressure and photomodulated reflectance

Autor:	F. Höhnsdorf, H. Grüning, P. M. A. Vicente, J. Koch, Peter J. Klar, Wolfram Heimbrodt, Wolfgang Stolz, J. Camassel
Rok vydání:	2000
Předmět:	Photoluminescence chemistry Impurity Hydrostatic pressure Analytical chemistry chemistry.chemical_element Metalorganic vapour phase epitaxy Condensed Matter Physics Nitrogen Reflectivity Spectral line
Zdroj:	High Pressure Research. 18:29-34
ISSN:	1477-2299 0895-7959
DOI:	10.1080/08957950008200944
Popis:	GaNxAs1−x samples with × ranging from 0.043% to 2.8% were grown by MOVPE. Analysing low-temperature photoluminescence spectra taken under hydrostatic pressure and room temperature photomodulated reflectance spectra gives strong evidence that the transition from N acting as an isoelectronic impurity to forming N-induced bands takes place at a N-concentration of about 0.2%.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d53fcc66f8ee95ab5efb9ed9fc9aea5c https://doi.org/10.1080/08957950008200944 Zobrazit plný text záznamu