Linear temperature sensors in high-voltage GaN-HEMT power devices
| Autor: | Oliver Ambacher, Richard Reiner, Michael Mikulla, Dirk Meder, Patrick Waltereit, M. Wespel, Beatrix Weiss, Rudiger Quay |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Interconnection Work (thermodynamics) Materials science business.industry 020208 electrical & electronic engineering Electrical engineering High voltage 02 engineering and technology High-electron-mobility transistor 01 natural sciences Temperature measurement Power (physics) Logic gate 0103 physical sciences Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Optoelectronics Power semiconductor device business |
| Zdroj: | 2016 IEEE Applied Power Electronics Conference and Exposition (APEC). |
| DOI: | 10.1109/apec.2016.7468154 |
| Popis: | This work presents a high-voltage GaN-based power HEMT with a highly-linear, monolithically-integrated temperature sensor. The principle is shown and compared to other concepts. The sensor is fabricated by using a interconnect metallization without additional process steps. The performance of the sensor as well as of the power device is characterized. The 600 V power device achieves an on-state resistance of RON = 55 mO at a corresponding drain current ID = 30 A and an advanced dynamic performance with a low gate charge of 20 nC. |
| Databáze: | OpenAIRE |
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