Highly reliable 50nm-thick PZT capacitor and low voltage FRAM device using Ir/SrRuO/sub 3//MOCVD PZT capacitor technology

Autor:	U-In Chung, Suk-pil Kim, June Moon, Dong-Hyun Im, Jung-Man Lim, Byung-Il Ryu, Dong-Chul Yoo, Byoung-Jae Bae, S.O. Park
Rok vydání:	2005
Předmět:	Materials science business.industry Ferroelectricity law.invention Non-volatile memory Capacitor law Electrode Electronic engineering Optoelectronics Crystallite Metalorganic vapour phase epitaxy business Polarization (electrochemistry) Low voltage
Zdroj:	Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..
Popis:	For the first time, we successfully developed highly reliable 50nm-thick polycrystalline PZT capacitor using noble Ir/SrRuO/sub 3/ top electrode and MOCVD PZT technology. In the 50nm-thick PZT capacitor, 33/spl mu/C/cm/sup 2/ of remanent polarization and 0.7V of saturation voltage have been demonstrated. Moreover, after 100hrs of bake-time at 150/spl deg/C, opposite-state polarization margin was over 23/spl mu/C/cm/sup 2/, which is world-wide best result so far achieved. Using this capacitor technology, highly reliable low voltage operating embedded FRAM device was successfully developed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d5379c263ae07e98db993ad1c84e47c1 https://doi.org/10.1109/.2005.1469228 Zobrazit plný text záznamu