AlGaN/GaN metal oxide semiconductor high electron mobility transistor using liquid-phase deposited strontium titanate
| Autor: | Po Wen Sze, Yeong-Her Wang, Chang Luen Wu, Tsu Yi Wu, Feri Adriyanto, Tong Jyun Huang, Chih Chun Hu |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry Transconductance Gate dielectric Analytical chemistry High-electron-mobility transistor Condensed Matter Physics Subthreshold slope Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Materials Chemistry Strontium titanate Optoelectronics Breakdown voltage Wafer Electrical and Electronic Engineering Thin film business |
| Zdroj: | Solid-State Electronics. 82:1-5 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2013.01.020 |
| Popis: | SrTiO 3 thin films were deposited on AlGaN/GaN wafer by a simple, low-temperature liquid-phase deposition (LPD) method, and applied as the gate dielectric in metal oxide semiconductor high electron mobility transistor (MOSHEMT). X-ray diffraction and electrical characteristics were measured to investigate the film phase and leakage current. AlGaN/GaN MOSHEMTs with 20 nm-thick SrTiO 3 as the gate dielectric were also fabricated. Compared with its counterpart HEMT, MOSHEMT shows lower leakage current and larger breakdown voltage. The suppressed gate leakage current improves both I on / I off ratio and subthreshold slope. Larger maximum drain current density could be achieved with higher V on in the MOSHEMT. Flatter transconductance and wider gate voltage swing of the MOSHEMT demonstrate better device linearity. The lower low-frequency noise is obtained due to the lower surface states. |
| Databáze: | OpenAIRE |
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